Best TO-252 MOSFET Transistors of 2026

Features

• Transistor Polarity: NMOS Configuration For High-Speed Switching Applications.
• Transistor Type: High Performance N-Channel Power MOSFET Transistor.
• Specification: Offering Excellent Power Management With The Ability To Handle High-Voltage Applications.

Features

• Model: High-Performance IRLR2905TRPBF, Renowned For Its Efficiency And Reliability.
• Transistor Type: N-Channel NMOS Power MOSFET Transistor.
• Package: Comes In An Anti-Static Bag That Offers Electrostatic Protection, ESD Safety, And Long Shelf Life.

Features

• Transistor Polarity: NMOS Power Transistor.
• Transistor Type: High Power N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor.
• Specification: Handles PD Of 50W, ID Up To 50A At A Case Temperature (Tc) Of 25℃, VDSS Up To 25V, And RDS(on) Of 0.006Ω.

Features

• Transistor Polarity: N-Channel MOSFET Transistor.
• Transistor Type: High Power NMOS Field-Effect Transistor.
• Specification: PD Of 44W At 25℃, ID Of 50A At 25℃, VDSS Of 40V, And RDS(on) Of 0.0085 Ω.

Features

• Transistor Polarity: N-Channel, Signifying Optimal Negative Gate-Source Voltage.
• Transistor Type: High-Power NMOS, N-Channel Field-Effect MOSFET Transistor.
• Specification: Upcoming Specifications Based On Your Product's Datasheet.

Features

• Transistor Polarity: N-Channel MOSFET Transistor, Offers High Speed Switching Capabilities And Low Gate Drive Power
• Transistor Type: High-Performance NMOS N-Channel Power MOSFET Transistor
• Package: Comes In A Pack Of 10 Pieces, Safely Packaged In An Anti-Static Bag For Electrostatic Protection And Long Shelf Life.

Features

• Transistor Polarity: N-Channel NMOS Transistor Designed For Efficient Power Management.
• Transistor Type: IRLR024NTRPBF Power MOSFET Transistor For Enhanced Performance.
• Specification: Built As Per Industry Specifications, Providing Reliable Operation In Various Applications.

Features

• Transistor Polarity: P-Channel MOSFET Transistor.
• Transistor Type: Power Metal-Oxide-Semiconductor Field-Effect (PMOS) Transistor.
• Specification: Power Dissipation (PD) At 90W, Drain Current (ID) At 70A, Drain-To-Source Voltage (VDSS) At 30V, And Drain-To-Source On-Resistance (RDS(on)) At 0.006 Ohm.

Features

• Transistor Polarity: This Is An N-Channel MOSFET Transistor, Suitable For Handling High Current Operations.
• Transistor Type: High Power N-Channel Metal-Oxide-Semiconductor Field-Effect NMOS Transistor.
• Specifications: It Can Manage A Drain-Source Voltage (VDSS) Up To 30V, A Drain Current (ID) Up To 161A At 25°C, And Has A Low On-State Resistance (RDS(on)) Of 0.0033 Ω.

Features

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